?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 HAB709A(pnp) general purpose transistor replacement type :2sb709a features ? for general amplification ? complementary t o had601a maximum ratings (t a = 25c unless otherwise noted) electrical characteristics (t a = 25c unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =-10a,i e =0 -45 v collector-emitter breakdown voltage v ceo i c =-2ma,i b =0 -45 v emitter-base breakdown voltage v ebo i e =-10ua,i c =0 -7 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a collector cut-off current i ceo v ce= -10v, i b =0 -100 a dc current gain h fe v ce =-10v,i c =-2ma 160 460 collector-emitter saturation voltage v ce(sat) i c =-100ma,i b =-10ma -0.5 v transition frequency f t v ce =-10v,i c =-1ma,f=200mhz 60 mhz collector output capacitance c ob v cb =-10v, i e =0,f=1mhz 2.7 pf rank q r s range 160-260 210-340 290-460 marking bq1 br1 bs1 parameter symbol value unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -7 v collector current-continuous i c -100 ma collector power dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg -55-150 c sot-23 classification of h fe 1: base 2:e mitter 3: collector
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HAB709A(pnp) general purpose transistor typical characteristics -0.1 -1 -10 1 10 100 -1 -10 -100 0 50 100 150 200 250 -0.1 -1 -10 -100 0 100 200 300 400 500 600 0 25 50 75 100 125 150 0 50 100 150 200 250 -0 -5 -10 -15 -0 -1 -2 -3 -4 -5 -6 -7 -8 -1 -10 -100 -0 -50 -100 -150 -200 f=1mhz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib c ib c ob -20 transition frequency f t (mhz) collector current i c (ma) v ce =-10v t a =25 o c i c f t v ce = -10v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe collector power dissipation p c (mw) ambient temperature t a ( ) p c t a common emitter t a =25 -3.0ua -2.7ua -2.4ua -21ua -18ua -15ua -12ua -9ua -6ua i b =-3ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic =10 t a =25 t a =100 =10 collector current i c (ma) collector-emitter saturation voltage v cesat (mv) v cesat i c
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HAB709A(pnp) general purpose transistor sot-23 package outline dimensions dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e 0.950 ty p 0.037 ty p e1 1.800 2.000 0.071 0.079 l 0.550 r e f 0.022 r e f l1 0.300 0.500 0.012 0.020 0 8 0 8
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HAB709A(pnp) general purpose transistor sot-23 embossed carrier tape sot-23 tape leader and traller sot-23 reel dimensions are in millimeter reel option d d1 d2 g h i w1 w2 7 dia 178 54.40 13.00 r78 r25.60 r6.50 9.50 12.3 0 tolerance 2 1 1 1 1 1 1 1 dimensions are in millimeter type a b c d e f p0 p p1 w sot-23 3.15 2.77 1.22 1.50 1.75 3.50 4.00 4.00 2.0 0 8.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
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